Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

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dc.contributor.authorPeng, Biaolin
dc.contributor.authorZhang, Qi
dc.contributor.authorLi, Xing
dc.contributor.authorSun, Tieyu
dc.contributor.authorFan, Huiqing
dc.contributor.authorKe, Shanming
dc.contributor.authorYe, Mao
dc.contributor.authorWang, Yu
dc.contributor.authorLu, Wei
dc.contributor.authorNiu, Hanben
dc.contributor.authorZeng, Xierong
dc.contributor.authorHuang, Haitao
dc.date.accessioned2016-07-04T14:19:12Z
dc.date.available2016-07-04T14:19:12Z
dc.date.issued2015-05-21
dc.description.abstractA highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).en_UK
dc.identifier.citationPeng B, Zhang Q, Li X, et al., (2015) Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases, ACS Applied Materials and Interfaces, Volume 7, Issue 24, June 2015, pp.13512-13517en_UK
dc.identifier.cris5703202
dc.identifier.issn1944-8244
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.5b02790
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/10073
dc.language.isoenen_UK
dc.publisherAmerican Chemical Societyen_UK
dc.rightsAttribution-Non-Commercial-No Derivatives 3.0 Unported (CC BY-NC-ND 3.0). You are free to: Share — copy and redistribute the material in any medium or format. The licensor cannot revoke these freedoms as long as you follow the license terms. Under the following terms: Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. Information: Non-Commercial — You may not use the material for commercial purposes. No Derivatives — If you remix, transform, or build upon the material, you may not distribute the modified material. No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.en_UK
dc.rights“NOTICE: this is the author’s version of a work that was accepted for publication in ACS Applied Materials and Interfaces. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in ACS Applied Materials and Interfaces, VOL 7, ISSUE 24, 21/05/2015 DOI 10.1021/acsami.5b02790”en_UK
dc.subjectEnergy storageen_UK
dc.subjectRelaxoren_UK
dc.subjectAntiferroelectricen_UK
dc.subjectTextureden_UK
dc.subjectSol-gelen_UK
dc.titleLarge Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phasesen_UK
dc.typeArticleen_UK

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