Wideband measurement of transistor small signal parameters by time domain spectrometry

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dc.contributor.authorYoung, G. M.
dc.date.accessioned2017-08-18T11:12:44Z
dc.date.available2017-08-18T11:12:44Z
dc.date.issued1969-04
dc.description.abstractTime Domain Spectrometry (TDS) Methods are outlined and their application to measurement of transistor parameters is discussed. Experimental results are presented and the advantages and limitations of TDS methods are re-assessed. Future developments are suggested.en_UK
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/12339
dc.language.isoenen_UK
dc.publisherCollege of Aeronauticsen_UK
dc.relation.ispartofseriesCoA/N/E&C-5en_UK
dc.relation.ispartofseries5en_UK
dc.titleWideband measurement of transistor small signal parameters by time domain spectrometryen_UK
dc.typeReporten_UK

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CoA. Notes: Electrical and Control Engineering (1961- 1969)