Browsing by Author "Peng, Biaolin"
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Item Open Access Dielectric and tunability properties of the Pb(Mg1/3Nb2/3)1-xZrxO3 ceramics(Elsevier Science B.V., Amsterdam., 2013-02-05T00:00:00Z) Peng, Biaolin; Fan, Huiqing; Li, Q; Zhang, QiPure perovskite Pb(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2O3 ceramics was prepared via a modified “columbite-type” method. The 1:1 B-site ordered structure of Pb(Sc1/2Nb1/2)O3 was detected by XRD and TEM. The dielectric relaxor behavior was described by a Lorentz relation. The dielectric tunability properties were investigated at 300K and 10 kHz. The results show that the ceramics possesses high dielectric tunability (~ 75% at 30 kV/cm), low dielectric loss (~ 0.003) and high figure of merit (~ 250), indicating that it is a promising tunable material. The high dielectric nonlinear behavior was illustrated by employing the Landau-Ginsberg-Devonshire thermodynamic theory and a multipolarization mechanism model. The results indicate that the high non-linearity is related to the contributions of the “extrinsic” polarizations such as the polar nanoregions and nanometer domain wall motions, etc., in addition to the contribution of the “intrinsic” lattice phonon polarization.Item Open Access Enhanced energy storage performance of (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics in a broad temperature range(Elsevier, 2019-03-03) Xu, Mengxing; Peng, Biaolin; Zhu, Jinian; Liu, Laijun; Sun, Wenhong; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, QiRelaxor ferroelectrics with high energy storage performances are very attractive for modern applications in electronic devices and systems. Here, it is demonstrated that large energy densities (0.52e0.58 J/cm3) simultaneously with high efficiencies (76è2%) and thermal stabilities (the minimum variation of efficiency < 4% from 323 K to 423 K at x ¼ 0.04) have been achieved in the (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics prepared using a conventional solid-state reaction method. Large dielectric breakdown strengths and great relaxor dispersion around the dielectric peaks are responsible for the excellent energy storage performances. The energy storage performances of as-prepared ceramics at high BFO doping amount (x ¼ 0.06 and 0.07) were deteriorated seriously due to low dielectric breakdown strengths. However, they could be greatly improved when aged, since the operable electric field was significantly enhanced from 10 kV/cm of as-prepared samples to 100 kV/cm of aged samples due to the reduced concentration of oxygen vacancies during the aging process. The excellent energy storage performances may make them attractive materials for applications in modern energy storage systems in a broad temperature range.Item Open Access Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics(Wiley, 2015-04-11) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Scott, James F.; Zeng, Xierong; Huang, HaitaoFerroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here we demonstrate that a giant electric energy density (154 J×cm-3, 3 times the highest value of lead-based systems and 5 times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion and the coexistence of the FE/AFE phases near the morphotropic phase boundary (MPB). The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.Item Open Access A giant electrocaloric effect in nanoscale antiferroelectric and ferroelectric phases coexisting in a relaxor Pb0.8Ba0.2ZrO3 thin film at room temperature(John Wiley & Sons, Ltd, 2013-06-20T00:00:00Z) Peng, Biaolin; Fan, Huiqing; Zhang, QiRecently large electrocaloric effects (ΔT = 12 K and ΔS = 8 JK-1kg-1 at 776 kV/cm) in antiferroelectric sol-gel PbZr0.95Ti0.05O3 thin film and (ΔT = 12.6 K and ΔS = 60 JK-1kg-1 at 2090 kV/cm) in ferroelectric polymer P(VDF-TrFE)55/45 thin film have been observed near their ferroelectric Curie temperatures 495 K and 353 K, respectively. Here the authors demonstrate a giant EC effect (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kV/cm) in the nano-scaled antiferroelectric and ferroelectric phases coexisted relaxor Pb0.8Ba0.2ZrO3 (PBZ) thin film at the room temperature 290 K rather than at its Curie temperature 408 K. Field-induced antiferroelectric to ferroelectric phase transition played a crucial role in the dramatic EC property of PBZ thin film.. The giant EC effect of PBZ thin film makes it an attractive material for applications in cooling systems near room temperature.Item Open Access High dielectric tunability, electrostriction strain and electrocaloric strength at a tricritical point of tetragonal, rhombohedral and pseudocubic phases(Elsevier, 2015-06-16) Peng, Biaolin; Zhang, Qi; Li, Tieyu; Ke, Shanming; Ye, Mao; Wang, Yu; Niu, Hanben; Zeng, Xierong; Fan, Huiqing; Huang, HaitaoA relaxor ferroelectric Pb(Ni1/3Nb2/3)0.5Zr0.15Ti0.35O3 (PNNZT) ceramic was reported, designed upon an idea that the composition is selected to near a tricritical point of tetragonal, rhombohedral and pseudocubic phases. High dielectric tunability of 67%, simultaneously with high electrostriction strain of 0.319% and high electrocaloric strength (ΔT/ΔE) of 32.5 mK cm/kV are achieved, which make it a promising multifunctional material for applications in dielectric tunable, precisely controlled and electric refrigeration devices. This is endowed by the low energy barrier among the transitions of phases and strong relaxor ferroelectric activities around the tricritical point. This work provides a guide for the design of multifunctional ferroelectric materials and can promote the development of other multifunctional ferroic materials.Item Open Access High tunability in (111)-oriented relaxor Pb0.8Ba0.2ZrO3 thin film with antiferroelectric and ferroelectric two-phase coexistence(Wiley, 2013-03-22) Peng, Biaolin; Fan, Huiqing; Zhang, QiUsing a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability (η) and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E = 560 kV/cm and ~236, respectively. High-temperature stability (η > 75% and FOM > 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current < 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.Item Open Access High-performance La-doped BCZT thin film capacitors on LaNiO3/Pt composite bottom electrodes with ultra-high efficiency and high thermal stability(Elsevier, 2019-03-13) He, Shangkai; Peng, Biaolin; Leighton, Glenn J. T.; Shaw, Christopher; Wang, Ningzhang; Sun, Wenhong; Liu, Laijun; Zhang, QiDielectric capacitors possessing large energy storage density, high efficiency and high thermal stability simultaneously are very attractive in modern electronic devices to be operated in harsh environment. Here, it is demonstrated that large energy storage density (W ∼ 15.5 J/cm3), ultra-high efficiency (η ∼93.7%) and high thermal stability (the variation of both W from 20 °C to 260 °C and η from 20 °C to 140 °C is less than 5%) have been simultaneously achieved in the La-doped (Ba0.904Ca0.096)0.9775+xLa0.015(Zr0.136Ti0.864)O3 (x = 0.0075) lead-free relaxor ferroelectric thin film capacitors deposited on LaNiO3/Pt composite bottom electrodes by using a sol-gel method. The good energy storage property of the thin film capacitors at x = 0.0075 is mainly ascribed to the diversity of the structure of the nano-clusters around the three-phases coexisting component point (Ba0.904Ca0.096)(Zr0.136Ti0.864)O3 where cubic, tetragonal and rhombohedral phases coexisted, as well as the ultra-high quality of thin film due to the utilization of the LaNiO3/Pt composite bottom electrode, making it a promising candidate for dielectric capacitors working in harsh environments.Item Open Access Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases(American Chemical Society, 2015-05-21) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, HaitaoA highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).Item Open Access Phase-transition induced giant negative electrocaloric effect in a lead-free relaxor ferroelectric thin film(Royal Society of Chemistry, 2019-05-02) Peng, Biaolin; Zhang, Qi; Gang, Bai; Leighton, Glenn J. T.; Shaw, Christopher; Milne, Steven J.; Zou, Bingsuo; Sun, Wenhong; Huang, Haitao; Wang, ZhonglinFerroelectric/antiferroelectric thin/thick films with large positive or negative electrocaloric (EC) effects could be very useful in designing commercial refrigeration devices. Here, a giant negative EC effect (maximum ΔT ∼ −42.5 K with ΔS ∼ −29.3 J K−1 kg−1) comparable to the best positive EC effects reported so far is demonstrated for 0.5(Ba0.8Ca0.2)TiO3–0.5Bi(Mg0.5Ti0.5)O3 (BCT–BMT) lead-free relaxor ferroelectric thin films prepared on Pt(111)/TiOx/SiO2/Si substrates using a sol–gel method. An electric-field induced structural phase transition (nanoscale tetragonal and orthorhombic to rhombohedral) along the out-of-plane [111] direction plays a very key role in developing the giant negative EC effect. This breakthrough will pave the way for practical applications of next-generation refrigeration devices with high cooling efficiency in one cycle by ingeniously utilizing and combining both the giant negative and positive EC effects. Moreover, a large energy density of 51.7 J cm−3 with a high power density of 1.15 × 1010 W kg−1 at room temperature is also achieved in the thin film, indicating that it is also an attractive multifunctional material for energy storage.Item Open Access Phase-transition induced optimization on electrostrain, electrocaloric refrigeration and energy storage of LiNbO3 doped BNT-BT ceramics(Elsevier, 2019-09-23) Zhang, Yueming; Liang, Guochuang; Tang, Silin; Peng, Biaolin; Zhang, Qi; Liu, Laijun; Wenhong, Sun((Bi0.5Na0.5TiO3)0.88-(BaTiO3)0.12)(1-x)-(LiNbO3)x (x = 0.0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, and 0.07; abbreviated as LiNbO3-doped BNT-BT) ceramics possessing many excellent performances (large electrostrain, negative electrocaloric effect and energy storage density with high efficiency) was fabricated by the conventional solid-state reaction method. A large electrostrain (maximum ~ 0.34% at 100 kV/cm and room temperature) with high thermal stability over a broad temperature range (~80 K) is obtained at x = 0.03. A large energy storage density (maximum Wenergy ~ 0.665 J/cm3 at 100 kV/cm and room temperature) with a high efficiency (η ~ 49.3%) is achieved at x = 0.06. Moreover, a large negative electrocaloric (EC) effect (maximum ΔT ~ 1.71 K with ΔS ~ - 0.22 J/(K kg) at 70 kV/cm)) is also obtained at x = 0.04. Phase transition (from ferroelectric to antiferroelectric and then to relaxor) induced by increasing the doping amount of LiNbO3 plays a very key role on the optimization of these performances. These findings and breakthroughs make the LiNbO3-doped BNT-BT ceramics very promising candidates as multifunctional materials.Item Open Access Preparation and field-induced electrical properties of perovskite relaxor ferroelectrics(Korean Institute of Electrical and Electronic Material Engineers (KIEEME), 2015-04-03) Fan, Huiqing; Peng, Biaolin; Zhang, Qi(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (AT = 45.3 K and AS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.Item Open Access Tailoring the electrocaloric effect of Pb0.78Ba0.2La0.02ZrO3 relaxor thin film by GaN substrates(Royal Society of Chemistry, 2019-11-06) Peng, Biaolin; Jiang, Jintao; Tang, Silin; Zhang, Miaomiao; Liu, Laijun; Zou, Bingsuo; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, Qi; Sun, WenhongThe electrocaloric (EC) effect in ferroelectric/antiferroelectric thin films has been widely investigated due to its potential applications in solid state cooling devices. It is demonstrated that the EC effect of the Pb0.78Ba0.2La0.02ZrO3 (PBLZ) relaxor thin films prepared by using a sol–gel method strongly depends on the substrates. The maximum ΔT of PBLZ thin films deposited on Pt(111)/TiOx/SiO2/Si(100) (Pt), LaNiO3/Pt(111)/TiOx/SiO2/Si(100) (LaNiO3/Pt), LaNiO3/n-type GaN (LaNiO3/n-GaN) and LaNiO3/p-type GaN (LaNiO3/p-GaN) substrates is ∼13.08 K, 16.46 K, 18.70 K, and 14.64 K, respectively. Moreover, negative EC effects in a broad temperature range (∼340 K to 440 K) could be obtained in the thin films deposited on LaNiO3/n-GaN and LaNiO3/p-GaN substrates, which is ascribed to higher proportions of orthorhombic antiferroelectric phase to rhombohedral ferroelectric phase induced by the GaN substrates. These results indicate that tailoring the EC effects by changing the substrates could provide a new strategy in designing an EC cooling device with high cooling efficiency.Item Open Access Thermal strain induced large electrocaloric effect of relaxor thin film on LaNiO3/Pt composite electrode with the coexistence of nanoscale antiferroelectric and ferroelectric phases in a broad temperature range(Elsevier, 2018-03-08) Peng, Biaolin; Zhang, Qi; Lyu, Yinong; Liu, Laijun; Lou, Xiaojie; Shaw, Christopher; Huang, Haitao; Wang, ZhonglinFerroelectric/antiferroelectric thin/thick films with large electrocaloric (EC) effect in a broad operational temperature range are very attractive in solid-state cooling devices. We demonstrated that a large positive electrocaloric (EC) effect (maximum ΔT ~ 20.7 K) in a broad temperature range (~ 110 K) was realized in Pb0.97La0.02(Zr0.65Sn0.3Ti0.05)O3 (PLZST) relaxor antiferroelectric (AFE) thin film prepared using a sol-gel method. The large positive EC effect may be ascribed to the in-plane residual thermal tensile stress during the layer-by-layer annealing process, and the high-quality film structure owing to the utilization of the LaNiO3/Pt composite bottom electrode. The broad EC temperature range may be ascribed to the great dielectric relaxor dispersion around the dielectric peak because of the coexistence of nanoscale multiple FE and AFE phases. Moreover, a large pyroelectric energy density (6.10 Jcm−3) was harvested by using an Olsen cycle, which is much larger than those (usually less than 10− Jcm−3) obtained by using direct thermal-electrical, Stirling and Carnot cycles, etc. These breakthroughs enable the PLZST thin film an attractive multifunctional material for applications in modern solid-state cooling and energy harvesting.