Browsing by Author "Li, Xing"

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    Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics
    (Wiley, 2015-04-11) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Scott, James F.; Zeng, Xierong; Huang, Haitao
    Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here we demonstrate that a giant electric energy density (154 J×cm-3, 3 times the highest value of lead-based systems and 5 times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion and the coexistence of the FE/AFE phases near the morphotropic phase boundary (MPB). The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
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    Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
    (American Chemical Society, 2015-05-21) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao
    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).