Influence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigation

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dc.contributor.authorChavoshi, Saeed Zare
dc.contributor.authorGoel, Saurav
dc.contributor.authorLuo, X.
dc.date.accessioned2016-12-23T09:17:41Z
dc.date.available2016-12-23T09:17:41Z
dc.date.issued2016-08-31
dc.description.abstractUsing molecular dynamics (MD) simulation, this paper investigates anisotropic cutting behaviour of single crystal silicon in vacuum under a wide range of substrate temperatures (300 K, 500 K, 750 K, 850 K, 1173 K and 1500 K). Specific cutting energy, force ratio, stress in the cutting zone and cutting temperature were the indicators used to quantify the differences in the cutting behaviour of silicon. A key observation was that the specific cutting energy required to cut the (1 1 1) surface of silicon and the von Mises stress to yield the silicon reduces by 25% and 32%, respectively, at 1173 K compared to what is required at 300 K. The room temperature cutting anisotropy in the von Mises stress and the room temperature cutting anisotropy in the specific cutting energy (work done by the tool in removing unit volume of material) were obtained as 12% and 16%, respectively. It was observed that this changes to 20% and 40%, respectively, when cutting was performed at 1500 K, signifying a very strong correlation between the anisotropy observed during cutting and the machining temperature. Furthermore, using the atomic strain criterion, the width of primary shear zone was found to vary with the orientation of workpiece surface and temperature i.e. it remains narrower while cutting the (1 1 1) surface of silicon or at higher machining temperatures. A major anecdote of the study based on the potential function employed in the study is that, irrespective of the cutting plane or the cutting temperature, the state of the cutting edge of the diamond tool did not show direct diamond to graphitic phase transformation.en_UK
dc.identifier.citationChavoshi SZ, Goel S, Luo X, Influence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigation, Journal of Manufacturing Processes, Volume 23, August 2016, Pages 201–210en_UK
dc.identifier.issn1526-6125
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmapro.2016.06.009
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/11189
dc.language.isoenen_UK
dc.publisherElsevieren_UK
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectMolecular dynamicsen_UK
dc.subjectSingle crystal siliconen_UK
dc.subjectAnisotropyen_UK
dc.subjectCutting temperatureen_UK
dc.titleInfluence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigationen_UK
dc.typeArticleen_UK

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