Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

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dc.contributor.authorZhang, Qien_UK
dc.contributor.authorWhatmore, Roger W.en_UK
dc.date.accessioned2005-11-23T10:54:20Z
dc.date.available2005-11-23T10:54:20Z
dc.date.issued2004-06-15en_UK
dc.description.abstractWe have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on substrates Pt/Ti/SiO2/Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics.en_UK
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dc.identifier.citationQ. Zhang and R. W. Whatmore, Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories, Materials Science and Engineering B, Volume 109, Issues 1-3, 15 June 2004, Pages 136-140.en_UK
dc.identifier.issn0921-5107
dc.identifier.urihttp://hdl.handle.net/1826/793
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2003.10.065
dc.language.isoenen_UK
dc.publisherElsevieren_UK
dc.titleLow fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memoriesen_UK
dc.typeArticleen_UK

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