Nanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validation

Simple item page
dc.contributor.authorGoel, Saurav
dc.contributor.authorFaisal, Nadimul Haque
dc.contributor.authorLuo, Xichun
dc.contributor.authorYan, Jiwang
dc.contributor.authorAgrawal, Anupam
dc.date.accessioned2016-10-19T13:20:49Z
dc.date.available2016-10-19T13:20:49Z
dc.date.issued2014-06-06
dc.description.abstractThis paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.en_UK
dc.identifier.citationSaurav Goel, Nadimul Haque Faisal, Xichun Luo, et al., (2014) Nanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validation, Journal of Physics D: Applied Physics, Vol. 47, Iss. 27, article id 275304en_UK
dc.identifier.issn0022-3727
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/47/27/275304
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/10782
dc.language.isoenen_UK
dc.publisherIOP Publishingen_UK
dc.rightsAttribution 3.0en_UK
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.subjectMD simulationen_UK
dc.subjectPolycrystalline siliconen_UK
dc.subjectSingle crystal siliconen_UK
dc.subjectNanoindentationen_UK
dc.titleNanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validationen_UK
dc.typeArticleen_UK

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Nanoindentation_of_polysilicon_and_single_crystal_silicon-2014.pdf
Size:
3.51 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.79 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Staff publications (SATM)