C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures
| dc.contributor.author | Andrew, R. | |
| dc.contributor.author | Loeb, H. W. | |
| dc.date.accessioned | 2015-09-02T13:33:14Z | |
| dc.date.available | 2015-09-02T13:33:14Z | |
| dc.date.issued | 1967-01 | |
| dc.description.abstract | The e::tension of the resistance network analogue method to the study of a M.O.S.T. structure is described. By means of an iterative technique, data regarding channel current, field distribution, surface charge and position of pinch-off point as function of gate and drain voltagen can be obtained which do not involve the usual 'gradual' channel approximation Results for a particular device geometry are presented. A discussion of a digital computer approach to the solution of semiconductor device current flow problems is included, together with preliminary results. | en_UK |
| dc.identifier.uri | http://dspace.lib.cranfield.ac.uk/handle/1826/9380 | |
| dc.language.iso | en | en_UK |
| dc.publisher | College of Aeronautics | en_UK |
| dc.relation.ispartofseries | 119 | en_UK |
| dc.relation.ispartofseries | COA/M-119 | en_UK |
| dc.title | C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures | en_UK |
| dc.type | Report | en_UK |