Thin Film Crystal Growth Template Removal: Application to stress reduction in Lead Zirconate Titanate Microstructures

dc.contributor.authorGkotsis, P.
dc.contributor.authorKirby, Paul B.
dc.contributor.authorSaharil, F.
dc.contributor.authorOberhammer, J.
dc.contributor.authorStemme, G.
dc.date.accessioned2010-04-27T09:48:01Z
dc.date.available2010-04-27T09:48:01Z
dc.date.issued2007-10
dc.description.abstractA key issue for the design and reliability of microdevices is process related; residual stresses in the thin films from which they are composed, especially for sol-gel deposited Pb(Zrx,Ti1-x)O3 ceramics, where use of Pt as a template layer, though essential for the nucleation of the perovskite phase, results in structures with high levels of stress largely fixed by the thermal expansion coefficient mismatch between Pt and Si. Here a technique for the elimination of this stress is presented, involving the use of adhesive wafer bonding and bulk micromachining procedures to remove the Pt layer following the Pb(Zrx,Ti1-x)O3 deposition.en_UK
dc.identifier.citationP.Gkotsis, P.B.Kirby, F.Saharil, J.Oberhammer, G. Stemme, Thin Film Crystal Growth Template Removal: Application to stress reduction in Lead Zirconate Titanate Microstructures, Applied Physics Letters, October 2007, Volume 91, Issue 16, Pages 163504-163504-3en_UK
dc.identifier.issn0003-6951
dc.identifier.urihttp://dx.doi.org/10.1063/1.2801386
dc.identifier.urihttp://hdl.handle.net/1826/4382
dc.language.isoenen_UK
dc.publisherAmerican Institute of Physicsen_UK
dc.titleThin Film Crystal Growth Template Removal: Application to stress reduction in Lead Zirconate Titanate Microstructuresen_UK
dc.typeArticleen_UK

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