In situ antimony doping of solution-grown ZnO nanorods
| dc.contributor.author | Briscoe, Joe | - |
| dc.contributor.author | Gallardo, Diego E. | - |
| dc.contributor.author | Dunn, Steve | - |
| dc.date.accessioned | 2011-04-14T23:29:05Z | |
| dc.date.available | 2011-04-14T23:29:05Z | |
| dc.date.issued | 2009-01-01T00:00:00Z | - |
| dc.description.abstract | ZnO nanorods are doped with Sb during the aqueous chemical synthesis by addition of Sb acetate dissolved in ethylene glycol. The reliable production of p-type ZnO has been a challenge for some time. This is because the as-grown ZnO is nominally n-type due to intrinsic defects, 1 so holes introduced by acceptor dopants are generally compensated by the high intrinsic free electron density. Despite these diļ¬culties, there have been increasing examples in recent years of p-type ZnO thin films and nanostructures. There is significant interest in producing p-type ZnO nanostructures due to many potential device applications. For example, transistors or diodes based on ZnO nano-homojunctions could be used for transparent electronics, UV optoelectronics and photonic | en_UK |
| dc.identifier.citation | Joe Briscoe, Diego E. Gallardo and Steve Dunn, In situ antimony doping of solution-grown ZnO nanorods, Chemical Communications, issue 10, 2009, pp1273-1275 | en_UK |
| dc.identifier.issn | 1359-7345 | - |
| dc.identifier.uri | http://dx.doi.org/10.1039/b820797f | - |
| dc.identifier.uri | http://dspace.lib.cranfield.ac.uk/handle/1826/4128 | |
| dc.language.iso | en_UK | en_UK |
| dc.publisher | Royal Society of Chemistry | en_UK |
| dc.title | In situ antimony doping of solution-grown ZnO nanorods | en_UK |
| dc.type | Article | en_UK |