In situ antimony doping of solution-grown ZnO nanorods

Date

2009-01-01T00:00:00Z

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Royal Society of Chemistry

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Article

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1359-7345

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Free to read from

Citation

Joe Briscoe, Diego E. Gallardo and Steve Dunn, In situ antimony doping of solution-grown ZnO nanorods, Chemical Communications, issue 10, 2009, pp1273-1275

Abstract

ZnO nanorods are doped with Sb during the aqueous chemical synthesis by addition of Sb acetate dissolved in ethylene glycol. The reliable production of p-type ZnO has been a challenge for some time. This is because the as-grown ZnO is nominally n-type due to intrinsic defects, 1 so holes introduced by acceptor dopants are generally compensated by the high intrinsic free electron density. Despite these diļ¬ƒculties, there have been increasing examples in recent years of p-type ZnO thin films and nanostructures. There is significant interest in producing p-type ZnO nanostructures due to many potential device applications. For example, transistors or diodes based on ZnO nano-homojunctions could be used for transparent electronics, UV optoelectronics and photonic

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