Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide

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dc.contributor.authorKnapp, Caroline E.
dc.contributor.authorDyer, Caragh
dc.contributor.authorChadwick, Nicholas P.
dc.contributor.authorHazael, Rachael
dc.contributor.authorCarmalt, Claire J.
dc.date.accessioned2021-07-29T14:27:12Z
dc.date.available2021-07-29T14:27:12Z
dc.date.issued2017-11-02
dc.description.abstractAerosol assisted chemical vapour deposition (AACVD) has been used to deposit thin films of ZnO from the single-source precursor [Zn(OC(Me)CHC(Me)N(iPr))2] (1) affording highly transparent (>80%) and conductive films (sheet resistance ∼70 KΩ/sq). Extension of this AACVD method whereby related precursors of the type, [R2M(OC(Me)CHC(Me)N(iPr))] (R = Et, M = Al (2); R = Me, M = Ga (3)), isolated as oils, were added to the precursor solution allowed for the deposition of aluminium- and gallium-doped ZnO (AZO and GZO) films, respectively. Complexes 1–3 were characterised by elemental analysis, NMR and mass spectrometry. Films were deposited in under 30 min at 400 °C, from CH2Cl2/toluene solutions with a N2 carrier gas. Herein we report the bulk resistivity, ρ, of AZO (0.252 Ω cm) and GZO (0.756 Ω cm) films deposited from this novel approach. All the films transparency exceeded 80% in the visible, X-ray diffraction (XRD) showed all films to crystallise in the wurtzite phase whilst X-ray photoemission spectroscopy (XPS) confirmed the presence of the Al and Ga dopants in the films, and highlighted the low C-contamination (<5%) this route offers. Investigation of a mechanism analogous to the Kirkendall effect confirmed that heating of GZO films at 1000 °C produced the spinel structure GaZn2O4.en_UK
dc.identifier.citationKnapp CE, Dyer C, Chadwick NP, et al., (2018) Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide. Polyhedron, Volume 140, February 2018, pp. 35-41en_UK
dc.identifier.issn0277-5387
dc.identifier.urihttps://doi.org/10.1016/j.poly.2017.10.036
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/16950
dc.language.isoenen_UK
dc.publisherElsevieren_UK
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectZinc oxideen_UK
dc.subjectThin filmsen_UK
dc.subjectAl dopingen_UK
dc.subjectGa dopingen_UK
dc.subjectAACVDen_UK
dc.titleMetal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxideen_UK
dc.typeArticleen_UK

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