Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

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dc.contributor.authorDerenzo, S.
dc.contributor.authorBourret, Edith D.
dc.contributor.authorHanrahan, S.
dc.contributor.authorBizarri, Gregory
dc.date.accessioned2018-07-16T13:50:09Z
dc.date.available2018-07-16T13:50:09Z
dc.date.issued2018-03-20
dc.description.abstractThis paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.en_UK
dc.identifier.citationDerenzo S, Bourret E, Hanrahan S, Bizarri G, Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter, Journal of Applied Physics, Volume 123, Issue 11, 2018, Article number 114501en_UK
dc.identifier.cris20930618
dc.identifier.issn0021-8979
dc.identifier.urihttp://dx.doi.org/10.1063/1.5018343
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/13343
dc.language.isoenen_UK
dc.publisherAIP Publishingen_UK
dc.rightsAttribution-NonCommercial 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/*
dc.subjectPhase transitionsen_UK
dc.subjectLuminescenceen_UK
dc.subjectSemiconductorsen_UK
dc.subjectThermoluminescenceen_UK
dc.subjectPhotodetectorsen_UK
dc.subjectRadiation detectorsen_UK
dc.subjectX-raysen_UK
dc.subjectBand structureen_UK
dc.subjectDark matteren_UK
dc.titleCryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matteren_UK
dc.typeArticleen_UK

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