Investigation of contact edge effects in the channel of planar Gunn diodes
Date
2019-11-26
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Publisher
IEEE
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Article
ISSN
0018-9383
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Citation
Mindil A, Dunn GM, Khalid A, Oxley CH. (2020) Investigation of contact edge effects in the channel of planar Gunn diodes. IEEE Transactions on Electron Devices, Volume 67, Issue 1, January 2020, pp. 53-56.
Abstract
The effect of the edge of the channel on the operation of Planar Gunn diodes has been examined using Monte Carlo simulations. High fields at the corner of the anode contact are known to cause impact ionization and consequent electroluminescence, but our simulations show that the Gunn domains are attracted to these corners, perturbing the formation of the domains which can lead to chaotic dynamics within the rest of the channel leading to uneven heating and reduced RF output power. We show how novel shaping of the electrical contacts at the ends of the channel reduces the attraction and restores the domain wave-fronts for good device operation.
Description
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Keywords
Planar Gunn diode, Monte Carlo, GaAs, Channel Edge
Rights
Attribution-NonCommercial 4.0 International