Fabrication and characterization of red-emitting electroluminescent devices based on thiol-stabilized semiconductor nanocrystals

dc.contributor.authorBertoni, Cristina-
dc.contributor.authorGallardo, Diego E.-
dc.contributor.authorDunn, Steve-
dc.contributor.authorGaponik, Nikolai-
dc.contributor.authorEychmüller, Alexander-
dc.date.accessioned2011-04-14T23:34:11Z
dc.date.available2011-04-14T23:34:11Z
dc.date.issued2007-01-15T00:00:00Z-
dc.description.abstractThiol-capped CdTe nanocrystals were used to fabricate light-emitting diodes, consisting of an emissive nanocrystal multilayer deposited via layer-by-layer, sandwiched between indium-tin-oxide and aluminum electrodes. The emissive and electrical properties of devices with different numbers of nanocrystal layers were studied. The improved structural homogeneity of the nanocrystal multilayer allowed for stable and repeatable current- and electroluminescence-voltage characteristics. These indicate that both current and electroluminescence are electric-field dependent. Devices were operated under ambient conditions and a clear red-light was detected. The best-performing device shows a peak external efficiency of 0.51% and was measured at 0.35mA/cm2 and 3.3V.en_UK
dc.identifier.citationCristina Bertoni, Diego Gallardo, Steve Dunn, Nikolai Gaponik and Alexander Eychmüller, (2007) Fabrication and characterization of red-emitting electroluminescent devices based on thiol-stabilized semiconductor nanocrystals, Applied Physics Letters, Volume 90, Issue 3, Article number 034107en_UK
dc.identifier.issn0003-6951-
dc.identifier.urihttp://dx.doi.org/10.1063/1.2433030-
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/1422
dc.language.isoen_UKen_UK
dc.publisherAmerican Institute of Physicsen_UK
dc.titleFabrication and characterization of red-emitting electroluminescent devices based on thiol-stabilized semiconductor nanocrystalsen_UK
dc.typeArticleen_UK

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