Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.

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dc.contributor.authorJiang, Hong Wen
dc.contributor.authorKirby, Paul B.
dc.contributor.authorZhang, Qi
dc.date.accessioned2007-03-21T12:16:58Z
dc.date.available2007-03-21T12:16:58Z
dc.date.issued2003
dc.description.abstractA processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel method. The piezoelectric coefficient d31 was calculated as 14pC/N.en
dc.format.extent836504 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationJiang H-W, Kirby P, Zhang Q. (2003) Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch. Micromachining and Microfabrication Process Technology VIII, San Jose California, USA, pp. 165-173en
dc.identifier.urihttp://hdl.handle.net/1826/1485
dc.language.isoenen
dc.publisherInternational Society for Optical Engineering - SPIEen
dc.subjectPZT thin filmen
dc.subjectMEMSen
dc.subjectRF switchen
dc.subjectSOIen
dc.subjectRIEen
dc.subjectDRIEen
dc.subjectBOEen
dc.subjectmicromachiningen
dc.subjectcantileveren
dc.titleFabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.en
dc.typeConference paperen

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