Preparation and field-induced electrical properties of perovskite relaxor ferroelectrics

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dc.contributor.authorFan, Huiqing
dc.contributor.authorPeng, Biaolin
dc.contributor.authorZhang, Qi
dc.date.accessioned2016-03-08T15:19:31Z
dc.date.available2016-03-08T15:19:31Z
dc.date.issued2015-04-03
dc.description.abstract(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (AT = 45.3 K and AS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.en_UK
dc.identifier.citationFan, H. Peng, B. and Zhang, Q. Preparation and field-induced electrical properties of perovskite relaxor ferroelectrics. Transactions on Electrical and Electronic Materials, 2015, Volume 16, Issue 1, pp.1-4en_UK
dc.identifier.issn1229-7607
dc.identifier.urihttp://dx.doi.org/10.4313/TEEM.2015.16.1.1
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/9758
dc.language.isoenen_UK
dc.publisherKorean Institute of Electrical and Electronic Material Engineers (KIEEME)en_UK
dc.rightsAttribution-Non-Commercial 3.0 Unported (CC BY-NC 3.0). This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. You are free to: Share — copy and redistribute the material in any medium or format Adapt — remix, transform, and build upon the material. The licensor cannot revoke these freedoms as long as you follow the license terms. Under the following terms: Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. Information: Non-Commercial — You may not use the material for commercial purposes. No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.
dc.subjectRelaxor ferroelectricsen_UK
dc.subjectDielectric tunabilityen_UK
dc.subjectElectrocaloricen_UK
dc.subjectSol-gelen_UK
dc.subjectField-induced phase transitionen_UK
dc.titlePreparation and field-induced electrical properties of perovskite relaxor ferroelectricsen_UK
dc.typeArticleen_UK

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