The PN junction as a variable reactance device for F. M. production

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dc.contributor.authorBrown, D. C.
dc.date.accessioned2017-04-26T09:24:18Z
dc.date.available2017-04-26T09:24:18Z
dc.date.issued1957-11
dc.description.abstractA completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation.en_UK
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/11822
dc.language.isoenen_UK
dc.publisherCollege of Aeronauticsen_UK
dc.relation.ispartofseriesCoA/N-76en_UK
dc.relation.ispartofseries76en_UK
dc.titleThe PN junction as a variable reactance device for F. M. productionen_UK
dc.typeReporten_UK

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CoA. Notes (1952-1969)