The PN junction as a variable reactance device for F. M. production
dc.contributor.author | Brown, D. C. | |
dc.date.accessioned | 2017-04-26T09:24:18Z | |
dc.date.available | 2017-04-26T09:24:18Z | |
dc.date.issued | 1957-11 | |
dc.description.abstract | A completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation. | en_UK |
dc.identifier.uri | http://dspace.lib.cranfield.ac.uk/handle/1826/11822 | |
dc.language.iso | en | en_UK |
dc.publisher | College of Aeronautics | en_UK |
dc.relation.ispartofseries | CoA/N-76 | en_UK |
dc.relation.ispartofseries | 76 | en_UK |
dc.title | The PN junction as a variable reactance device for F. M. production | en_UK |
dc.type | Report | en_UK |