The PN junction as a variable reactance device for F. M. production
Date
1957-11
Authors
Supervisor/s
Journal Title
Journal ISSN
Volume Title
Publisher
College of Aeronautics
Department
Type
Report
ISSN
Format
Free to read from
Citation
Abstract
A completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation.