From growth surface to device interface: preserving metallic Fe under monolayer hexagonal boron nitride

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dc.contributor.authorCaneva, Sabina
dc.contributor.authorMartin, Marie-Blandine
dc.contributor.authorD'Arsie, Lorenzo
dc.contributor.authorAria, Adrianus Indrat
dc.contributor.authorSezen, Hikmet
dc.contributor.authorAmati, Matteo
dc.contributor.authorGregoratti, Luca
dc.contributor.authorSugime, Hisashi
dc.contributor.authorEsconjauregui, Santiago
dc.contributor.authorRobertson, John
dc.contributor.authorHofmann, Stephan
dc.contributor.authorWeatherup, Robert S.
dc.date.accessioned2017-10-12T14:34:49Z
dc.date.available2017-10-12T14:34:49Z
dc.date.issued2017-08-08
dc.description.abstractWe investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapor deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a metallic state during exposure to moist air for ∼40 h at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g., domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of Fe. We further confirm that the interface between h-BN and metallic Fe can be recovered by vacuum annealing at ∼600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.en_UK
dc.identifier.citationCaneva S, Martin M-B, D'Arsie L, et al., From growth surface to device interface: preserving metallic Fe under monolayer hexagonal boron nitride, ACS Applied Materials and Interfaces, 2017, Vol. 9, Issue 35, pp. 29973-29981en_UK
dc.identifier.cris18269438
dc.identifier.issn1944-8244
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.7b08717
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/12621
dc.language.isoenen_UK
dc.publisherAmerican Chemical Societyen_UK
dc.rightsAttribution-NonCommercial 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/
dc.subjectChemical vapor deposition (CVD)en_UK
dc.subjectHexagonal boron nitride (h-BN)en_UK
dc.subjectInterfacial chemistryen_UK
dc.subjectIron (Fe)en_UK
dc.subjectX-ray photoelectron spectroscopy (XPS)en_UK
dc.titleFrom growth surface to device interface: preserving metallic Fe under monolayer hexagonal boron nitrideen_UK
dc.typeArticleen_UK

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