Characterisation and Material Removal Properties of the RAP™ Process

dc.contributor.advisorNicholls, J. R.
dc.contributor.advisorShore, Paul
dc.contributor.authorO'Brien, William John
dc.date.accessioned2011-11-07T17:00:45Z
dc.date.available2011-11-07T17:00:45Z
dc.date.issued2011
dc.description.abstractThe Reactive Atom Plasma® (RAP) process is a plasma chemical etching process. RAP was developed at RAPT Industries as a process for removing subsurface damage from silicon carbide optics. The process is being investigated at Cranfield University as a novel method for the fine surface correction of large optics, with the aim of shortening the manufacturing period of the next generation of large telescopes. RAP offers material removal rates that are up to 10 times higher than those of ion beam figuring, the current state-of-the-art technique and the convenience in that it can be operated at atmospheric pressure. Cont/d.en_UK
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/6560
dc.language.isoenen_UK
dc.publisherCranfield Universityen_UK
dc.rights© Cranfield University, 2011. All rights reserved. No part of this publication may be reproduced without the written permission of the copyright holder.en_UK
dc.titleCharacterisation and Material Removal Properties of the RAP™ Processen_UK
dc.typeThesis or dissertationen_UK
dc.type.qualificationlevelDoctoralen_UK
dc.type.qualificationnamePhDen_UK

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