C.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systems

dc.contributor.authorDavis, J. A.
dc.contributor.authorLoeb, H. W.
dc.date.accessioned2015-08-27T15:21:59Z
dc.date.available2015-08-27T15:21:59Z
dc.date.issued1965-11
dc.description.abstractA general method for the solution of the nonlinear Shockley-Poisson differential equation which governs the potential distribution in non-degenerate semiconductor systems is described which can be applied to the evaluation of depletion layer widths, carrier densities and capacitance bias relationships of p-n junction structures. The method is based upon the use of a particular type of resistance network analogue and results obtained for several one and two dimensional configurations are discussed.en_UK
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/9356
dc.language.isoenen_UK
dc.publisherCollege of Aeronauticsen_UK
dc.relation.ispartofseries85en_UK
dc.relation.ispartofseriesCOA/M-85en_UK
dc.titleC.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systemsen_UK
dc.typeReporten_UK

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