Data relating to "Combinatorial Sputtering of Photoluminescent Europium Titanium Oxide Thin Films"

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dc.contributor.authorChen, Junfeng
dc.contributor.authorIndrat Aria, Adrianus
dc.contributor.authorRao, Jeff
dc.date.accessioned2024-11-28T11:48:03Z
dc.date.available2024-11-08T15:56:14Z
dc.date.available2024-11-21T15:17:45Z
dc.date.available2024-11-28T11:48:03Z
dc.date.issued2024-11-08
dc.descriptionPhotoluminescent thin films were fabricated using a combinatorial physical vapour deposition (PVD) sputtering process, enabling rapid variation of europium oxide (Eu2O3) in titanium dioxide (TiO2) with concentrations varying from x = 0 to 1 in x = Eu/(Eu+Ti). Figure 1: The relationship of the composition x as a function of L in Eu/(Eu+Ti). Figure 2: The emission spectra of samples with different components. Figure 3: Powder XRD patterns data of samples with different components. Figure SI 9&10&11: Powder XRD pattern data of quartz substrate, and Thin film XRD patterns data of samples with different components. Figure SI 12&13: Raman spectra data of samples with different components. Figure SI 14&15: Excitation and emission spectra of samples with x = 6 at% and 8 at% as-deposition, after annealing at 450˚C and annealing at 600˚C. Figure SI 16: Excitation of 5 at%, 6 at%, 8 at%, 18 at%, 26 at%, 77 at% and 98 at% Eu/(Eu+Ti) samples after annealing at 600˚C. Figure SI 17&18: Transmittance and Bandgap of x = 0 at%, 6 at%, 26 at%, 77 at%, 98 at% and 100 at% thin films.
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/23236
dc.identifier.urihttps://doi.org/10.57996/cran.ceres-2684
dc.publisherCranfield University
dc.rightsAttribution-NoDerivatives 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by-nd/4.0/
dc.subjectEuropium Titanium Oxide
dc.subjectPhysical Vapour Deposition
dc.subjectCombinatorial Sputtering
dc.subjectPhotoluminescence
dc.titleData relating to "Combinatorial Sputtering of Photoluminescent Europium Titanium Oxide Thin Films"
dc.typeDataset

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