Resistance network simulation of semiconductor systems

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dc.contributor.authorLoeb, H. W.
dc.date.accessioned2016-10-20T13:27:37Z
dc.date.available2016-10-20T13:27:37Z
dc.date.issued1964-09
dc.description.abstract1. Introduction A basic problem in the design theory of semiconductor systems such as p-n junction devices relates to the determination of the spatial variation of electrostatic potential, 4, of electric field intensity, and of mobile carrier (hole, electron) concentrations, p and n ... [cont.].en_UK
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/10799
dc.language.isoenen_UK
dc.publisherCollege of Aeronauticsen_UK
dc.relation.ispartofseriesCoA/M/E&C-46en_UK
dc.relation.ispartofseries46en_UK
dc.titleResistance network simulation of semiconductor systemsen_UK
dc.typeReporten_UK

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