Investigation of high-frequency fine structure in the current output of shaped contact planar gunn diodes

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dc.contributor.authorMindil, Ahmed
dc.contributor.authorDunn, Geoffrey
dc.contributor.authorKhalid, Ata
dc.contributor.authorOxley, Chris H.
dc.date.accessioned2020-12-08T18:27:25Z
dc.date.available2020-12-08T18:27:25Z
dc.date.issued2020-04-08
dc.description.abstractA novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feed- back potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.en_UK
dc.identifier.citationMindil A, Dunn GM, Khalid A, Oxley CH. (2020) Investigation of high-frequency fine structure in the current output of shaped contact planar gunn diodes. IEEE Transactions on Electron Devices, Volume 67, Issue 5, May 2020, Article number 9061165, pp. 1946-1951en_UK
dc.identifier.issn0018-9383
dc.identifier.urihttps://doi.org/10.1109/TED.2020.2981191
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/16064
dc.language.isoenen_UK
dc.publisherIEEEen_UK
dc.rightsAttribution-NonCommercial 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/*
dc.subjectMonte Carloen_UK
dc.subjectmultiple peaksen_UK
dc.subjectGallium arsenide (GaAs)en_UK
dc.subjecthigh frequencyen_UK
dc.subjectplanar Gunn diodeen_UK
dc.titleInvestigation of high-frequency fine structure in the current output of shaped contact planar gunn diodesen_UK
dc.typeArticleen_UK

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