Impact of indium doping in lead-free (CH3NH3)3Bi2-xInxI9 perovskite photovoltaics for indoor and outdoor light harvesting

Hybrid halide perovskites (HHPs) have revolutionized the field of solar cells due to their low cost, solution-processable synthesis, and exceptional device performance. Although lead (Pb)-based perovskites are currently the most efficient, their application in indoor photovoltaics and wearable electronics is limited by lead’s toxicity. This has intensified the search for Pb-free alternatives, particularly for use in portable electronic devices. In this study, we utilized a vapor-assisted solution process to systematically engineer the composition of bismuth-based perovskite-inspired materials (PIMs) through indium doping, forming homogeneous and pinhole-free (CH3NH3)3Bi2–xInxI9 (Bi–In) films. These bimetallic Bi–In perovskites exhibit enhanced properties, including high recombination resistance, reduced low-frequency capacitance, lower defect density, and minimal microstrain. Electrochemical impedance spectroscopy (EIS) shows significantly reduced ion migration in Bi–In compositions compared with pure bismuth-based counterparts. The optimized Bi–In-based solar cells achieved a power conversion efficiency (PCE) of 2.5% under outdoor illumination and 5.9% under indoor lighting, showcasing their potential as promising lead-free alternatives for photovoltaic applications.