Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films
Date
2007-04
Authors
Supervisor/s
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Department
Type
Article
ISSN
0003-6951
Format
Free to read from
Citation
Jiang AQ, Lin YY, Tang TA, Zhang Q. (2007) Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films. Applied Physics Letters, Volume 90, April 2007, Article number 142901
Abstract
Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films demonstrate a double hysteresis loop characteristic of antiferroelectric behavior with film thickness at above 150 nm, but only one branch of the loop is present in films that are 90 nm thick. The relaxation time of domain backswitching from ferroelectric into antiferroelectric is multistaged in a range of 100 ns–100 ms, but it is less than 100 ns in the films without Sn and Nb dopants. Electrical modeling of the films composed of elementary regions with inhomogeneities of dielectric constant, conductivity, and polarization embodies the essence of charge injection for the compensation of local backswitching field of domains.