C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures

Andrew, R.; Loeb, H. W.

dc.contributor.author	Andrew, R.
dc.contributor.author	Loeb, H. W.
dc.date.accessioned	2015-09-02T13:33:14Z
dc.date.available	2015-09-02T13:33:14Z
dc.date.issued	1967-01
dc.identifier.uri	http://dspace.lib.cranfield.ac.uk/handle/1826/9380
dc.description.abstract	The e::tension of the resistance network analogue method to the study of a M.O.S.T. structure is described. By means of an iterative technique, data regarding channel current, field distribution, surface charge and position of pinch-off point as function of gate and drain voltagen can be obtained which do not involve the usual 'gradual' channel approximation Results for a particular device geometry are presented. A discussion of a digital computer approach to the solution of semiconductor device current flow problems is included, together with preliminary results.	en_UK
dc.language.iso	en	en_UK
dc.publisher	College of Aeronautics	en_UK
dc.relation.ispartofseries	119	en_UK
dc.relation.ispartofseries	COA/M-119	en_UK
dc.title	C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures	en_UK
dc.type	Report	en_UK