Abstract:
The e::tension of the resistance network analogue method to the study
of a M.O.S.T. structure is described. By means of an iterative technique,
data regarding channel current, field distribution, surface charge and
position of pinch-off point as function of gate and drain voltagen can be
obtained which do not involve the usual 'gradual' channel approximation
Results for a particular device geometry are presented.
A discussion of a digital computer approach to the solution of semiconductor
device current flow problems is included, together with preliminary
results.
