C.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systems

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dc.contributor.author Davis, J. A.
dc.contributor.author Loeb, H. W.
dc.date.accessioned 2015-08-27T15:21:59Z
dc.date.available 2015-08-27T15:21:59Z
dc.date.issued 1965-11
dc.identifier.uri http://dspace.lib.cranfield.ac.uk/handle/1826/9356
dc.description.abstract A general method for the solution of the nonlinear Shockley-Poisson differential equation which governs the potential distribution in non-degenerate semiconductor systems is described which can be applied to the evaluation of depletion layer widths, carrier densities and capacitance bias relationships of p-n junction structures. The method is based upon the use of a particular type of resistance network analogue and results obtained for several one and two dimensional configurations are discussed. en_UK
dc.language.iso en en_UK
dc.publisher College of Aeronautics en_UK
dc.relation.ispartofseries 85 en_UK
dc.relation.ispartofseries COA/M-85 en_UK
dc.title C.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systems en_UK
dc.type Report en_UK


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