Abstract:
A general method for the solution of the nonlinear
Shockley-Poisson differential equation which
governs the potential distribution in non-degenerate
semiconductor systems is described which can be applied
to the evaluation of depletion layer widths, carrier
densities and capacitance bias relationships of p-n
junction structures.
The method is based upon the use of a particular
type of resistance network analogue and results obtained
for several one and two dimensional configurations are
discussed.
