Browsing Staff publications (SATM) by Author "Nakanishi, Kenichi"

Browsing Staff publications (SATM) by Author "Nakanishi, Kenichi"

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  • Degl'Innocenti, Riccardo; Xiao, Long; Kindness, Stephen J.; Kamboj, Varun S.; Wei, Binbin; Braeuninger-Weimer, Philipp; Nakanishi, Kenichi; Aria, Adrianus Indrat; Hofmann, Stephan; Beere, Harvey E.; Ritchie, David A. (IOP Publishing, 2017-03-27)
    We present a fast room temperature terahertz detector based on graphene loaded plasmonic antenna arrays. The antenna elements, which are arranged in series and are shorted by graphene, are contacting source and drain ...
  • Cebo, Tomasz; Aria, Adrianus Indrat; Dolan, James A.; Weatherup, Robert S.; Nakanishi, Kenichi; Kidambi, Piran R.; Divitini, Giorgio; Ducati, Caterina; Steiner, Ullrich; Hofmann, Stephan (AIP Publishing, 2017-12-18)
    The direct chemical vapour deposition of freestanding graphene gyroids with controlled sub-60 nm unit cell sizes is demonstrated. Three-dimensional (3D) nickel templates were fabricated through electrodeposition into a ...
  • Nakanishi, Kenichi; Aria, Adrianus Indrat; Berwind, Matthew; Weatherup, Robert S.; Eberl, Christoph; Hofmann, Stephan; Fleck, Norman A. (Elsevier, 2018-08-09)
    Open-cell graphitic foams were fabricated by chemical vapor deposition using nickel templates and their compressive responses were measured over a range of relative densities. The mechanical response required an interpretation ...
  • Di Nuzzo, Daniele; Mizuta, Ryo; Nakanishi, Kenichi; Martin, Marie-Blandine; Aria, Adrianus Indrat; Weatherup, Robert; Friend, Richard H.; Hofmann, Stephan; Alexander-Webber, Jack (AIP Publishing, 2020-04-20)
    Efficient injection of charge from metal electrodes into semiconductors is of paramount importance to obtain high performance optoelectronic devices. The quality of the interface between the electrode and the semiconductor ...
  • Aria, Adrianus Indrat; Nakanishi, Kenichi; Xiao, Long; Braeuninger-Weimer, Philipp; Sagade, Abhay A.; Alexander-Webber, Jack; Hofmann, Stephan (ACS Applied Materials and Interfaces, 2016-10-10)
    Atomic layer deposition (ALD) of ultrathin aluminum oxide (AlOx) films was systematically studied on supported chemical vapor deposition (CVD) graphene. We show that by extending the precursor residence time, using either ...

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