Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

Zhang, Qi; Whatmore, Roger W.

CERES Home
→
School of Applied Sciences (SAS) (2006-July 2014)
→
Staff publications (SAS)
→
View Item

dc.contributor.author	Zhang, Qi	en_UK
dc.contributor.author	Whatmore, Roger W.	en_UK
dc.date.accessioned	2005-11-23T10:54:20Z
dc.date.available	2005-11-23T10:54:20Z
dc.date.issued	2004-06-15	en_UK
dc.identifier.citation	Q. Zhang and R. W. Whatmore, Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories, Materials Science and Engineering B, Volume 109, Issues 1-3, 15 June 2004, Pages 136-140.	en_UK
dc.identifier.issn	0921-5107
dc.identifier.uri	http://hdl.handle.net/1826/793
dc.identifier.uri	http://dx.doi.org/10.1016/j.mseb.2003.10.065
dc.description.abstract	We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on substrates Pt/Ti/SiO2/Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics.	en_UK
dc.format.extent	1947 bytes
dc.format.extent	177690 bytes
dc.format.extent	46026 bytes
dc.format.extent	99316 bytes
dc.format.extent	53575 bytes
dc.format.extent	42691 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.format.mimetype	application/pdf
dc.format.mimetype	application/pdf
dc.format.mimetype	application/pdf
dc.format.mimetype	application/pdf
dc.language.iso	en	en_UK
dc.publisher	Elsevier	en_UK
dc.title	Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories	en_UK
dc.type	Article	en_UK