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Please use this identifier to cite or link to this item: http://dspace.lib.cranfield.ac.uk/handle/1826/7355

Document Type: Article
Title: Study of compositional change in the interfacial regions between lead strontium titanate (PST)/SiO2 and lead zirconate titanate (PZT)/SiO2 by Auger emission spectroscopy
Authors: Luker, Arne
Zhang, Qi
Kirby, Paul B.
Issue Date: 2010
Citation: Arne Luker, Qi Zhanga and Paul B. Kirby. Study of compositional change in the interfacial regions between lead strontium titanate (PST)/SiO2 and lead zirconate titanate (PZT)/SiO2 by Auger emission spectroscopy. Thin Solid Films, Volume 518, Issue 14, 3 May 2010, Pages 3763-3766
Abstract: Auger spectroscopy was used to study the compositional change in the interfacial region between ferroelectric thin films, namely lead strontium titanate (PST) and lead zirconate titanate (PZT), and commercial available Si substrates with a 200 nm thick thermal oxide layer. Both PST and PZT thin films were prepared via a sol-gel spin coating method. The thin films from both materials were annealed under the same conditions (temperature and time). It was found that strontium stops the lead diffusion into SiO2 by forming SrTiO3 and/or SrO, maintaining a well defined SiO2 region, while PbSiO3 is formed in the PZT/SiO2 system. These results are important for a general understanding of interdiffusions in material interfaces in particular for the realization of future high-dielectric-constant (high-k) oxide layers and for the next generation of advanced electronic devices.
URI: http://dx.doi.org/10.1016/j.tsf.2009.11.018
http://dspace.lib.cranfield.ac.uk/handle/1826/7355
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