Study of compositional change in the interfacial regions between lead strontium titanate (PST)/SiO2 and lead zirconate titanate (PZT)/SiO2 by Auger emission spectroscopy

Abstract

Auger spectroscopy was used to study the compositional change in the interfacial region between ferroelectric thin films, namely lead strontium titanate (PST) and lead zirconate titanate (PZT), and commercial available Si substrates with a 200 nm thick thermal oxide layer. Both PST and PZT thin films were prepared via a sol-gel spin coating method. The thin films from both materials were annealed under the same conditions (temperature and time). It was found that strontium stops the lead diffusion into SiO2 by forming SrTiO3 and/or SrO, maintaining a well defined SiO2 region, while PbSiO3 is formed in the PZT/SiO2 system. These results are important for a general understanding of interdiffusions in material interfaces in particular for the realization of future high-dielectric-constant (high-k) oxide layers and for the next generation of advanced electronic devices.