Citation:
A. Q. Jiang, X. B. Liu, and Q. Zhang, Nanosecond-range imprint and retention characterized from polarization-voltage
hysteresis loops in insulating or leaky ferroelectric thin films, Applied Physics Letters, Volume 99, Issue 14, 2011, Paper Number 142905.
Abstract:
We transferred ferroelectric domain switching currents under pulses into
polarization-voltage (P-V) hysteresis loops. With this transformation, it is
possible to derive the remanent polarization and coercive voltage from domain
switching currents after the shortest imprint and retention time of 35 ns. After
the separation of film leakage current from domain switching current, we
measured the P-V hysteresis loop in a semiconducting BiFeO3 leaky thin film,
where the apparent coercive field highly reaches 320 kV/cm2, suggestive of a
different domain switching mechanism from other insulators. This technique
facilitates nanosecond-range measurements of both ferroelectric capacitive and
resistive memories.
