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Please use this identifier to cite or link to this item: http://dspace.lib.cranfield.ac.uk/handle/1826/4366

Document Type: Article
Title: Defects of SiC nanowires studied by STM and STS
Authors: Busiakiewicz, Adam
Huczko, A.
Dudziak, Tomasz
Puchalski, M.
Kozlowski, W.
Cichomski, M.
Cudzilo, S.
Klusek, Z.
Olejniczak, W.
Issue Date: 2010
Citation: A. Busiakiewicz, A. Huczko, T. Dudziak, M. Puchalski, W. Kozlowski, M. Cichomski, S. Cudzilo, Z. Klusek, W. Olejniczak, Defects of SiC nanowires studied by STM and STS, Applied Surface Science, Volume 256, Issue 15, 15 May 2010, Pages 4771-4776, Proceedings of the 4th International Workshop on Surface Physics 'Surfaces and Nanostructures'
Abstract: For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation.
URI: http://dx.doi.org/10.1016/j.apsusc.2010.01.102
Appears in Collections:Staff publications - School of Applied Sciences

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