Please use this identifier to cite or link to this item:
|Document Type: ||Article|
|Title: ||A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the
Etching of ULE® Surface|
|Authors: ||Fanara, C.|
Nicholls, J. R.
|Issue Date: ||2006|
|Citation: ||C. Fanara, P. Shore, J.R. Nicholls , N. Lyford , J. Kelley , J. Carr , P. Sommer; A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the Etching of ULE® Surfaces, Advanced Engineering Materials, 2006, Volume 8, Issue 10 , Pages 933-939|
|Abstract: ||Results on reactive atom plasma etching performed on ULE® (Corning Ultra Low
Expansion) glass samples at atmospheric pressure are presented for the first
time. A reactive atomic plasma technology (RAPT®), has been developed by RAPT
Industries and employed for the finishing of optical surfaces. An atmospheric
pressure argon inductively coupled plasma (ICP) excites a reactive gas injected
through its centre. The plume of hot neutral excited species reacts at the
substrate yielding controlled and repeatable trenches. In the case of ULE a
material removal (up to 0.55 mm3/s) is obtained without pre-heating the samples.
Among the factors influencing the results, an increase in gas concentration at
the same power does not change the sample temperature, indicating that thermo-
chemical effects do not influence the removal rates. Due to the plasma
constructive constrains, increasing the gas concentration is more practical and
of wider effect than increasing the power. The benefits of the process are
illustrated and the extension of the technology to large optical surfaces
|Appears in Collections:||Staff publications - School of Applied Sciences|
Items in CERES are protected by copyright, with all rights reserved, unless otherwise indicated.