CERES > School of Applied Sciences (SAS) (2006-July 2014) > Staff publications - School of Applied Sciences >

Please use this identifier to cite or link to this item: http://dspace.lib.cranfield.ac.uk/handle/1826/2450

Document Type: Article
Title: A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the Etching of ULE® Surface
Authors: Fanara, C.
Shore, Paul
Nicholls, J. R.
Lyford, N.
Kelley, J.
Carr, J.
Sommer, P.
Issue Date: 2006
Citation: C. Fanara, P. Shore, J.R. Nicholls , N. Lyford , J. Kelley , J. Carr , P. Sommer; A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the Etching of ULE® Surfaces, Advanced Engineering Materials, 2006, Volume 8, Issue 10 , Pages 933-939
Abstract: Results on reactive atom plasma etching performed on ULE® (Corning Ultra Low Expansion) glass samples at atmospheric pressure are presented for the first time. A reactive atomic plasma technology (RAPT®), has been developed by RAPT Industries and employed for the finishing of optical surfaces. An atmospheric pressure argon inductively coupled plasma (ICP) excites a reactive gas injected through its centre. The plume of hot neutral excited species reacts at the substrate yielding controlled and repeatable trenches. In the case of ULE a material removal (up to 0.55 mm3/s) is obtained without pre-heating the samples. Among the factors influencing the results, an increase in gas concentration at the same power does not change the sample temperature, indicating that thermo- chemical effects do not influence the removal rates. Due to the plasma constructive constrains, increasing the gas concentration is more practical and of wider effect than increasing the power. The benefits of the process are illustrated and the extension of the technology to large optical surfaces discusse
URI: http://dx.doi.org/10.1002/adem.200600028
Appears in Collections:Staff publications - School of Applied Sciences

Files in This Item:

File Description SizeFormat
RAPT-etching ULE surfaces-2006.pdf211.44 kBAdobe PDFView/Open

SFX Query

Items in CERES are protected by copyright, with all rights reserved, unless otherwise indicated.