Citation:
Peng B, Fan H, Zhang Q. (2013) High tunability in (111)-oriented relaxor Pb0.8Ba0.2ZrO3 thin film with antiferroelectric and ferroelectric two-phase coexistence. Journal of the American Ceramic Society, Volume 96, Issue 6, June 2013, pp. 1852-1856
Abstract:
Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability (η) and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E = 560 kV/cm and ~236, respectively. High-temperature stability (η > 75% and FOM > 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current < 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.
