Citation:
A. Q. Jiang, Y. Y. Lin, T. A. Tang, Q. Zhang, Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films, Applied Physics Letters, 90, article 142901 April 2007
Abstract:
Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films demonstrate a double hysteresis loop characteristic of antiferroelectric behavior with film thickness at above 150 nm, but only one branch of the loop is present in films that are 90 nm thick. The relaxation time of domain backswitching from ferroelectric into antiferroelectric is multistaged in a range of 100 ns–100 ms, but it is less than 100 ns in the films without Sn and Nb dopants. Electrical modeling of the films composed of elementary regions with inhomogeneities of dielectric constant, conductivity, and polarization embodies the essence of charge injection for the compensation of local backswitching field of domains.
