Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.

Jiang, Hong Wen; Kirby, Paul B.; Zhang, Qi

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dc.contributor.author	Jiang, Hong Wen
dc.contributor.author	Kirby, Paul B.
dc.contributor.author	Zhang, Qi
dc.date.accessioned	2007-03-21T12:16:58Z
dc.date.available	2007-03-21T12:16:58Z
dc.date.issued	2003
dc.identifier.citation	Jiang H-W, Kirby P, Zhang Q. (2003) Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch. Micromachining and Microfabrication Process Technology VIII, San Jose California, USA, pp. 165-173	en
dc.identifier.uri	http://hdl.handle.net/1826/1485
dc.description.abstract	A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel method. The piezoelectric coefficient d31 was calculated as 14pC/N.	en
dc.format.extent	836504 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en	en
dc.publisher	International Society for Optical Engineering - SPIE	en
dc.subject	PZT thin film	en
dc.subject	MEMS	en
dc.subject	RF switch	en
dc.subject	SOI	en
dc.subject	RIE	en
dc.subject	DRIE	en
dc.subject	BOE	en
dc.subject	micromachining	en
dc.subject	cantilever	en
dc.title	Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.	en
dc.type	Conference paper	en