Citation:
Jiang H-W, Kirby P, Zhang Q. (2003) Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch. Micromachining and Microfabrication Process Technology VIII, San Jose California, USA, pp. 165-173
Abstract:
A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator
wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The
microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate
deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the
1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to
perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel
method. The piezoelectric coefficient d31 was calculated as 14pC/N.
