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|Document Type: ||Postprint|
|Title: ||Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.|
|Authors: ||Jiang, Hong Wen|
Kirby, Paul B.
|Issue Date: ||2003|
|Citation: ||Hong Wen Jiang, Paul Kirby and Qi Zhang; Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch. Micromachining and Microfabrication Process Technology VIII, San Jose California, USA 2003. pp 165-173|
|Abstract: ||A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator
wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The
microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate
deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the
1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to
perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel
method. The piezoelectric coefficient d31 was calculated as 14pC/N.|
|Appears in Collections:||Staff publications - School of Applied Sciences|
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