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Please use this identifier to cite or link to this item: http://dspace.lib.cranfield.ac.uk/handle/1826/1485

Document Type: Postprint
Title: Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch.
Authors: Jiang, Hong Wen
Kirby, Paul B.
Zhang, Qi
Issue Date: 2003
Citation: Hong Wen Jiang, Paul Kirby and Qi Zhang; Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch. Micromachining and Microfabrication Process Technology VIII, San Jose California, USA 2003. pp 165-173
Abstract: A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel method. The piezoelectric coefficient d31 was calculated as 14pC/N.
URI: http://hdl.handle.net/1826/1485
Appears in Collections:Staff publications - School of Applied Sciences

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