Substrate effects on domain structures of PZT 30/70 sol-gel films via PiezoAFM

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dc.contributor.author Dunn, Steve
dc.contributor.author Whatmore, Roger W.
dc.date.accessioned 2006-11-14T16:14:52Z
dc.date.available 2006-11-14T16:14:52Z
dc.date.issued 2002-06
dc.identifier.citation S. Dunn and R. W. Whatmore, Substrate effects on domain structures of PZT 30/70 sol-gel films via PiezoAFM, Journal of the European Ceramic Society, Volume 22, Issue 6, June 2002, Pages 825-833. en
dc.identifier.uri http://hdl.handle.net/1826/1229
dc.identifier.uri http://dx.doi.org/10.1016/S0955-2219(01)00402-2
dc.description.abstract Using an atomic force microscope (AFM) modified to perform PiezoAFM we have investigated the piezoelectric response of sol-gel thin film lead zirconate titanate (PZT 30/70, PbZr0.3Ti0.7O3) on Pt–Ti/SiO2/Si, indium tin oxide (ITO)/glass and Pt/MgO. The films were produced by spin coating a PZT 30/70 sol and firing at 520 °C for Pt electrode systems and 600 °C for the ITO system. By conducting PiezoAFM hysteresis loops we have shown that the localised piezoelectric response varies for PZT on differing substrates. The degree of asymmetry in the hysteresis loops varies for each substrate, as do the coercive fields. The coercive fields have been found to be ±18 V/μm for PZT/ITO/glass, +22 and −18 V/μm for PZT/Ti-Pt/SiO2/Si and +35 and −20 V/μm for PZT/Pt/MgO. The PZT grown on Pt/MgO, Pt-Ti/SiO2 and ITO/glass shows an offset or asymmetric hysteresis loop, which was confirmed by the differing fields required for poling during domain modification experiments performed on PZT/Pt/MgO. δ33 values obtained for the PZT thin films investigated range from 50pm/V for PZT/Pt–Ti/SiO2/Si to 40 pm/V for PZT/ITO/glass. en
dc.format.extent 1504791 bytes
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Elsevier en
dc.subject AFM en
dc.subject Perovskites en
dc.subject Piezoelectric properties en
dc.subject PZT en
dc.subject Sol–gel methods en
dc.subject Substrates en
dc.subject Thin films en
dc.title Substrate effects on domain structures of PZT 30/70 sol-gel films via PiezoAFM en
dc.type Postprint en


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