The PN junction as a variable reactance device for F. M. production

Brown, D. C.

dc.contributor.author	Brown, D. C.
dc.date.accessioned	2017-04-26T09:24:18Z
dc.date.available	2017-04-26T09:24:18Z
dc.date.issued	1957-11
dc.identifier.uri	http://dspace.lib.cranfield.ac.uk/handle/1826/11822
dc.description.abstract	A completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation.	en_UK
dc.language.iso	en	en_UK
dc.publisher	College of Aeronautics	en_UK
dc.relation.ispartofseries	CoA/N-76	en_UK
dc.relation.ispartofseries	76	en_UK
dc.title	The PN junction as a variable reactance device for F. M. production	en_UK
dc.type	Report	en_UK