A Brief Overview of SiC MOSFET Failure Modes and Design Reliability
Date
2017-03-02
Authors
Supervisor/s
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Department
Type
Article
ISSN
2212-8271
Format
Free to read from
Citation
Nel BJ, Perinpanayagam S, A Brief Overview of SiC MOSFET Failure Modes and Design Reliability, Procedia CIRP, Volume 29, 2017, Pages 280 - 285.
Abstract
This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) into a design. There is an increasing trend regarding the use of these devices in various applications due to their improved performance over conventional Silicon (Si) based devices. The failure modes of SiC MOSFETs are discussed, as well as the indicators which signal device degradation and failure. The impact of packing design on reliability and performance is also discussed along with a number of application related concepts which bring to light some of the issues regarding the use of SiC MOSFETs as a relatively young technology.
Description
Software Description
Software Language
Github
Keywords
SiC, MOSFET, Overview, Reliability, Failure, Application
DOI
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