Resistance network simulation of semiconductor systems

Loeb, H. W.

dc.contributor.author	Loeb, H. W.
dc.date.accessioned	2016-10-20T13:27:37Z
dc.date.available	2016-10-20T13:27:37Z
dc.date.issued	1964-09
dc.identifier.uri	http://dspace.lib.cranfield.ac.uk/handle/1826/10799
dc.description.abstract	1. Introduction A basic problem in the design theory of semiconductor systems such as p-n junction devices relates to the determination of the spatial variation of electrostatic potential, 4, of electric field intensity, and of mobile carrier (hole, electron) concentrations, p and n ... [cont.].	en_UK
dc.language.iso	en	en_UK
dc.publisher	College of Aeronautics	en_UK
dc.relation.ispartofseries	CoA/M/E&C-46	en_UK
dc.relation.ispartofseries	46	en_UK
dc.title	Resistance network simulation of semiconductor systems	en_UK
dc.type	Report	en_UK