Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

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dc.contributor.author Peng, Biaolin
dc.contributor.author Zhang, Qi
dc.contributor.author Li, Xing
dc.contributor.author Sun, Tieyu
dc.contributor.author Fan, Huiqing
dc.contributor.author Ke, Shanming
dc.contributor.author Ye, Mao
dc.contributor.author Wang, Yu
dc.contributor.author Lu, Wei
dc.contributor.author Niu, Hanben
dc.contributor.author Zeng, Xierong
dc.contributor.author Huang, Haitao
dc.date.accessioned 2016-07-04T14:19:12Z
dc.date.available 2016-07-04T14:19:12Z
dc.date.issued 2015-05-21
dc.identifier.citation Peng, B. et al. (2015) Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases, ACS Applied Materials and Interfaces, Vol. 7, Iss. 24, pp.13512-13517 en_UK
dc.identifier.issn 1944-8244
dc.identifier.uri http://dx.doi.org/10.1021/acsami.5b02790
dc.identifier.uri http://dspace.lib.cranfield.ac.uk/handle/1826/10073
dc.description.abstract A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented). en_UK
dc.language.iso en en_UK
dc.publisher American Chemical Society en_UK
dc.rights Attribution-Non-Commercial-No Derivatives 3.0 Unported (CC BY-NC-ND 3.0). You are free to: Share — copy and redistribute the material in any medium or format. The licensor cannot revoke these freedoms as long as you follow the license terms. Under the following terms: Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. Information: Non-Commercial — You may not use the material for commercial purposes. No Derivatives — If you remix, transform, or build upon the material, you may not distribute the modified material. No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits. en_UK
dc.rights “NOTICE: this is the author’s version of a work that was accepted for publication in ACS Applied Materials and Interfaces. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in ACS Applied Materials and Interfaces, VOL 7, ISSUE 24, 21/05/2015 DOI 10.1021/acsami.5b02790” en_UK
dc.subject Energy storage en_UK
dc.subject Relaxor en_UK
dc.subject Antiferroelectric en_UK
dc.subject Textured en_UK
dc.subject Sol-gel en_UK
dc.title Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases en_UK
dc.type Article en_UK
dc.identifier.cris 5703202


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