Browsing by Author "Tang, Silin"
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Item Open Access Phase-transition induced optimization on electrostrain, electrocaloric refrigeration and energy storage of LiNbO3 doped BNT-BT ceramics(Elsevier, 2019-09-23) Zhang, Yueming; Liang, Guochuang; Tang, Silin; Peng, Biaolin; Zhang, Qi; Liu, Laijun; Wenhong, Sun((Bi0.5Na0.5TiO3)0.88-(BaTiO3)0.12)(1-x)-(LiNbO3)x (x = 0.0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, and 0.07; abbreviated as LiNbO3-doped BNT-BT) ceramics possessing many excellent performances (large electrostrain, negative electrocaloric effect and energy storage density with high efficiency) was fabricated by the conventional solid-state reaction method. A large electrostrain (maximum ~ 0.34% at 100 kV/cm and room temperature) with high thermal stability over a broad temperature range (~80 K) is obtained at x = 0.03. A large energy storage density (maximum Wenergy ~ 0.665 J/cm3 at 100 kV/cm and room temperature) with a high efficiency (η ~ 49.3%) is achieved at x = 0.06. Moreover, a large negative electrocaloric (EC) effect (maximum ΔT ~ 1.71 K with ΔS ~ - 0.22 J/(K kg) at 70 kV/cm)) is also obtained at x = 0.04. Phase transition (from ferroelectric to antiferroelectric and then to relaxor) induced by increasing the doping amount of LiNbO3 plays a very key role on the optimization of these performances. These findings and breakthroughs make the LiNbO3-doped BNT-BT ceramics very promising candidates as multifunctional materials.Item Open Access Tailoring the electrocaloric effect of Pb0.78Ba0.2La0.02ZrO3 relaxor thin film by GaN substrates(Royal Society of Chemistry, 2019-11-06) Peng, Biaolin; Jiang, Jintao; Tang, Silin; Zhang, Miaomiao; Liu, Laijun; Zou, Bingsuo; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, Qi; Sun, WenhongThe electrocaloric (EC) effect in ferroelectric/antiferroelectric thin films has been widely investigated due to its potential applications in solid state cooling devices. It is demonstrated that the EC effect of the Pb0.78Ba0.2La0.02ZrO3 (PBLZ) relaxor thin films prepared by using a sol–gel method strongly depends on the substrates. The maximum ΔT of PBLZ thin films deposited on Pt(111)/TiOx/SiO2/Si(100) (Pt), LaNiO3/Pt(111)/TiOx/SiO2/Si(100) (LaNiO3/Pt), LaNiO3/n-type GaN (LaNiO3/n-GaN) and LaNiO3/p-type GaN (LaNiO3/p-GaN) substrates is ∼13.08 K, 16.46 K, 18.70 K, and 14.64 K, respectively. Moreover, negative EC effects in a broad temperature range (∼340 K to 440 K) could be obtained in the thin films deposited on LaNiO3/n-GaN and LaNiO3/p-GaN substrates, which is ascribed to higher proportions of orthorhombic antiferroelectric phase to rhombohedral ferroelectric phase induced by the GaN substrates. These results indicate that tailoring the EC effects by changing the substrates could provide a new strategy in designing an EC cooling device with high cooling efficiency.