Browsing by Author "Sun, Wenhong"
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Item Open Access Enhanced energy storage performance of (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics in a broad temperature range(Elsevier, 2019-03-03) Xu, Mengxing; Peng, Biaolin; Zhu, Jinian; Liu, Laijun; Sun, Wenhong; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, QiRelaxor ferroelectrics with high energy storage performances are very attractive for modern applications in electronic devices and systems. Here, it is demonstrated that large energy densities (0.52e0.58 J/cm3) simultaneously with high efficiencies (76è2%) and thermal stabilities (the minimum variation of efficiency < 4% from 323 K to 423 K at x ¼ 0.04) have been achieved in the (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics prepared using a conventional solid-state reaction method. Large dielectric breakdown strengths and great relaxor dispersion around the dielectric peaks are responsible for the excellent energy storage performances. The energy storage performances of as-prepared ceramics at high BFO doping amount (x ¼ 0.06 and 0.07) were deteriorated seriously due to low dielectric breakdown strengths. However, they could be greatly improved when aged, since the operable electric field was significantly enhanced from 10 kV/cm of as-prepared samples to 100 kV/cm of aged samples due to the reduced concentration of oxygen vacancies during the aging process. The excellent energy storage performances may make them attractive materials for applications in modern energy storage systems in a broad temperature range.Item Open Access High-performance La-doped BCZT thin film capacitors on LaNiO3/Pt composite bottom electrodes with ultra-high efficiency and high thermal stability(Elsevier, 2019-03-13) He, Shangkai; Peng, Biaolin; Leighton, Glenn J. T.; Shaw, Christopher; Wang, Ningzhang; Sun, Wenhong; Liu, Laijun; Zhang, QiDielectric capacitors possessing large energy storage density, high efficiency and high thermal stability simultaneously are very attractive in modern electronic devices to be operated in harsh environment. Here, it is demonstrated that large energy storage density (W ∼ 15.5 J/cm3), ultra-high efficiency (η ∼93.7%) and high thermal stability (the variation of both W from 20 °C to 260 °C and η from 20 °C to 140 °C is less than 5%) have been simultaneously achieved in the La-doped (Ba0.904Ca0.096)0.9775+xLa0.015(Zr0.136Ti0.864)O3 (x = 0.0075) lead-free relaxor ferroelectric thin film capacitors deposited on LaNiO3/Pt composite bottom electrodes by using a sol-gel method. The good energy storage property of the thin film capacitors at x = 0.0075 is mainly ascribed to the diversity of the structure of the nano-clusters around the three-phases coexisting component point (Ba0.904Ca0.096)(Zr0.136Ti0.864)O3 where cubic, tetragonal and rhombohedral phases coexisted, as well as the ultra-high quality of thin film due to the utilization of the LaNiO3/Pt composite bottom electrode, making it a promising candidate for dielectric capacitors working in harsh environments.Item Open Access Phase-transition induced giant negative electrocaloric effect in a lead-free relaxor ferroelectric thin film(Royal Society of Chemistry, 2019-05-02) Peng, Biaolin; Zhang, Qi; Gang, Bai; Leighton, Glenn J. T.; Shaw, Christopher; Milne, Steven J.; Zou, Bingsuo; Sun, Wenhong; Huang, Haitao; Wang, ZhonglinFerroelectric/antiferroelectric thin/thick films with large positive or negative electrocaloric (EC) effects could be very useful in designing commercial refrigeration devices. Here, a giant negative EC effect (maximum ΔT ∼ −42.5 K with ΔS ∼ −29.3 J K−1 kg−1) comparable to the best positive EC effects reported so far is demonstrated for 0.5(Ba0.8Ca0.2)TiO3–0.5Bi(Mg0.5Ti0.5)O3 (BCT–BMT) lead-free relaxor ferroelectric thin films prepared on Pt(111)/TiOx/SiO2/Si substrates using a sol–gel method. An electric-field induced structural phase transition (nanoscale tetragonal and orthorhombic to rhombohedral) along the out-of-plane [111] direction plays a very key role in developing the giant negative EC effect. This breakthrough will pave the way for practical applications of next-generation refrigeration devices with high cooling efficiency in one cycle by ingeniously utilizing and combining both the giant negative and positive EC effects. Moreover, a large energy density of 51.7 J cm−3 with a high power density of 1.15 × 1010 W kg−1 at room temperature is also achieved in the thin film, indicating that it is also an attractive multifunctional material for energy storage.Item Open Access Tailoring the electrocaloric effect of Pb0.78Ba0.2La0.02ZrO3 relaxor thin film by GaN substrates(Royal Society of Chemistry, 2019-11-06) Peng, Biaolin; Jiang, Jintao; Tang, Silin; Zhang, Miaomiao; Liu, Laijun; Zou, Bingsuo; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, Qi; Sun, WenhongThe electrocaloric (EC) effect in ferroelectric/antiferroelectric thin films has been widely investigated due to its potential applications in solid state cooling devices. It is demonstrated that the EC effect of the Pb0.78Ba0.2La0.02ZrO3 (PBLZ) relaxor thin films prepared by using a sol–gel method strongly depends on the substrates. The maximum ΔT of PBLZ thin films deposited on Pt(111)/TiOx/SiO2/Si(100) (Pt), LaNiO3/Pt(111)/TiOx/SiO2/Si(100) (LaNiO3/Pt), LaNiO3/n-type GaN (LaNiO3/n-GaN) and LaNiO3/p-type GaN (LaNiO3/p-GaN) substrates is ∼13.08 K, 16.46 K, 18.70 K, and 14.64 K, respectively. Moreover, negative EC effects in a broad temperature range (∼340 K to 440 K) could be obtained in the thin films deposited on LaNiO3/n-GaN and LaNiO3/p-GaN substrates, which is ascribed to higher proportions of orthorhombic antiferroelectric phase to rhombohedral ferroelectric phase induced by the GaN substrates. These results indicate that tailoring the EC effects by changing the substrates could provide a new strategy in designing an EC cooling device with high cooling efficiency.