Browsing by Author "Liu, Laijun"
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Item Open Access Enhanced energy storage performance of (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics in a broad temperature range(Elsevier, 2019-03-03) Xu, Mengxing; Peng, Biaolin; Zhu, Jinian; Liu, Laijun; Sun, Wenhong; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, QiRelaxor ferroelectrics with high energy storage performances are very attractive for modern applications in electronic devices and systems. Here, it is demonstrated that large energy densities (0.52e0.58 J/cm3) simultaneously with high efficiencies (76è2%) and thermal stabilities (the minimum variation of efficiency < 4% from 323 K to 423 K at x ¼ 0.04) have been achieved in the (1-x)(BCT-BMT)-xBFO lead-free relaxor ferroelectric ceramics prepared using a conventional solid-state reaction method. Large dielectric breakdown strengths and great relaxor dispersion around the dielectric peaks are responsible for the excellent energy storage performances. The energy storage performances of as-prepared ceramics at high BFO doping amount (x ¼ 0.06 and 0.07) were deteriorated seriously due to low dielectric breakdown strengths. However, they could be greatly improved when aged, since the operable electric field was significantly enhanced from 10 kV/cm of as-prepared samples to 100 kV/cm of aged samples due to the reduced concentration of oxygen vacancies during the aging process. The excellent energy storage performances may make them attractive materials for applications in modern energy storage systems in a broad temperature range.Item Open Access High-performance La-doped BCZT thin film capacitors on LaNiO3/Pt composite bottom electrodes with ultra-high efficiency and high thermal stability(Elsevier, 2019-03-13) He, Shangkai; Peng, Biaolin; Leighton, Glenn J. T.; Shaw, Christopher; Wang, Ningzhang; Sun, Wenhong; Liu, Laijun; Zhang, QiDielectric capacitors possessing large energy storage density, high efficiency and high thermal stability simultaneously are very attractive in modern electronic devices to be operated in harsh environment. Here, it is demonstrated that large energy storage density (W ∼ 15.5 J/cm3), ultra-high efficiency (η ∼93.7%) and high thermal stability (the variation of both W from 20 °C to 260 °C and η from 20 °C to 140 °C is less than 5%) have been simultaneously achieved in the La-doped (Ba0.904Ca0.096)0.9775+xLa0.015(Zr0.136Ti0.864)O3 (x = 0.0075) lead-free relaxor ferroelectric thin film capacitors deposited on LaNiO3/Pt composite bottom electrodes by using a sol-gel method. The good energy storage property of the thin film capacitors at x = 0.0075 is mainly ascribed to the diversity of the structure of the nano-clusters around the three-phases coexisting component point (Ba0.904Ca0.096)(Zr0.136Ti0.864)O3 where cubic, tetragonal and rhombohedral phases coexisted, as well as the ultra-high quality of thin film due to the utilization of the LaNiO3/Pt composite bottom electrode, making it a promising candidate for dielectric capacitors working in harsh environments.Item Open Access Phase-transition induced optimization on electrostrain, electrocaloric refrigeration and energy storage of LiNbO3 doped BNT-BT ceramics(Elsevier, 2019-09-23) Zhang, Yueming; Liang, Guochuang; Tang, Silin; Peng, Biaolin; Zhang, Qi; Liu, Laijun; Wenhong, Sun((Bi0.5Na0.5TiO3)0.88-(BaTiO3)0.12)(1-x)-(LiNbO3)x (x = 0.0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, and 0.07; abbreviated as LiNbO3-doped BNT-BT) ceramics possessing many excellent performances (large electrostrain, negative electrocaloric effect and energy storage density with high efficiency) was fabricated by the conventional solid-state reaction method. A large electrostrain (maximum ~ 0.34% at 100 kV/cm and room temperature) with high thermal stability over a broad temperature range (~80 K) is obtained at x = 0.03. A large energy storage density (maximum Wenergy ~ 0.665 J/cm3 at 100 kV/cm and room temperature) with a high efficiency (η ~ 49.3%) is achieved at x = 0.06. Moreover, a large negative electrocaloric (EC) effect (maximum ΔT ~ 1.71 K with ΔS ~ - 0.22 J/(K kg) at 70 kV/cm)) is also obtained at x = 0.04. Phase transition (from ferroelectric to antiferroelectric and then to relaxor) induced by increasing the doping amount of LiNbO3 plays a very key role on the optimization of these performances. These findings and breakthroughs make the LiNbO3-doped BNT-BT ceramics very promising candidates as multifunctional materials.Item Open Access Tailoring the electrocaloric effect of Pb0.78Ba0.2La0.02ZrO3 relaxor thin film by GaN substrates(Royal Society of Chemistry, 2019-11-06) Peng, Biaolin; Jiang, Jintao; Tang, Silin; Zhang, Miaomiao; Liu, Laijun; Zou, Bingsuo; Leighton, Glenn J. T.; Shaw, Christopher; Luo, Nengneng; Zhang, Qi; Sun, WenhongThe electrocaloric (EC) effect in ferroelectric/antiferroelectric thin films has been widely investigated due to its potential applications in solid state cooling devices. It is demonstrated that the EC effect of the Pb0.78Ba0.2La0.02ZrO3 (PBLZ) relaxor thin films prepared by using a sol–gel method strongly depends on the substrates. The maximum ΔT of PBLZ thin films deposited on Pt(111)/TiOx/SiO2/Si(100) (Pt), LaNiO3/Pt(111)/TiOx/SiO2/Si(100) (LaNiO3/Pt), LaNiO3/n-type GaN (LaNiO3/n-GaN) and LaNiO3/p-type GaN (LaNiO3/p-GaN) substrates is ∼13.08 K, 16.46 K, 18.70 K, and 14.64 K, respectively. Moreover, negative EC effects in a broad temperature range (∼340 K to 440 K) could be obtained in the thin films deposited on LaNiO3/n-GaN and LaNiO3/p-GaN substrates, which is ascribed to higher proportions of orthorhombic antiferroelectric phase to rhombohedral ferroelectric phase induced by the GaN substrates. These results indicate that tailoring the EC effects by changing the substrates could provide a new strategy in designing an EC cooling device with high cooling efficiency.Item Open Access Thermal strain induced large electrocaloric effect of relaxor thin film on LaNiO3/Pt composite electrode with the coexistence of nanoscale antiferroelectric and ferroelectric phases in a broad temperature range(Elsevier, 2018-03-08) Peng, Biaolin; Zhang, Qi; Lyu, Yinong; Liu, Laijun; Lou, Xiaojie; Shaw, Christopher; Huang, Haitao; Wang, ZhonglinFerroelectric/antiferroelectric thin/thick films with large electrocaloric (EC) effect in a broad operational temperature range are very attractive in solid-state cooling devices. We demonstrated that a large positive electrocaloric (EC) effect (maximum ΔT ~ 20.7 K) in a broad temperature range (~ 110 K) was realized in Pb0.97La0.02(Zr0.65Sn0.3Ti0.05)O3 (PLZST) relaxor antiferroelectric (AFE) thin film prepared using a sol-gel method. The large positive EC effect may be ascribed to the in-plane residual thermal tensile stress during the layer-by-layer annealing process, and the high-quality film structure owing to the utilization of the LaNiO3/Pt composite bottom electrode. The broad EC temperature range may be ascribed to the great dielectric relaxor dispersion around the dielectric peak because of the coexistence of nanoscale multiple FE and AFE phases. Moreover, a large pyroelectric energy density (6.10 Jcm−3) was harvested by using an Olsen cycle, which is much larger than those (usually less than 10− Jcm−3) obtained by using direct thermal-electrical, Stirling and Carnot cycles, etc. These breakthroughs enable the PLZST thin film an attractive multifunctional material for applications in modern solid-state cooling and energy harvesting.