Interface-induced plasmon nonhomogeneity in nanostructured metal-dielectric planar metamateria

dc.contributor.authorKovalev, Anatoly I.
dc.contributor.authorWainstein, D. L.
dc.contributor.authorRashkovskiy, A. Y.
dc.contributor.authorGago, R.
dc.contributor.authorSoldera, F.
dc.contributor.authorEndrino, José L.
dc.contributor.authorFox-Rabinovich, German S.
dc.date.accessioned2016-02-23T16:15:35Z
dc.date.available2016-02-23T16:15:35Z
dc.date.issued2015
dc.description.abstractTransformations of the electronic structure in thin silver layers in metal-dielectric (TiAlN/Ag) multilayer nanocomposite were investigated by a set of electron spectroscopy techniques. Localization of the electronic states in the valence band and reduction of electron concentration in the conduction band was observed. This led to decreasing metallic properties of silver in the thin films. A critical layer thickness of 23.5 nm associated with the development of quantum effects was determined by X-ray photoelectron spectroscopy. Scanning Auger electron microscopy of characteristic energy losses provided images of plasmon localization in the Ag layers. The nonuniformity of plasmon intensities distribution near the metal-nitride interfaces was assessed experimentally.en_UK
dc.identifier.citationKovalev AI, Wainstein DL, Yu A, et al., (2015) Interface-induced plasmon nonhomogeneity in nanostructured metal-dielectric planar metamaterial. Journal of Nanomaterials, Volume 2015, Article ID 876247en_UK
dc.identifier.issn1687-4110
dc.identifier.urihttp://dx.doi.org/10.1155/2015/876247
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/9730
dc.language.isoenen_UK
dc.publisherHindawi Publishing Corporationen_UK
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleInterface-induced plasmon nonhomogeneity in nanostructured metal-dielectric planar metamateriaen_UK
dc.typeArticleen_UK

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